TSHG5210 - High Speed Infrared Emitting Diode

Name: TSHG5210
SKU: TSHG5210-711749

Vishay Siliconix

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Datasheet Details

Part number	TSHG5210
Manufacturer	Vishay Siliconix
File Size	101.74 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5210_VishaySiliconix.pdf

TSHG5210 Product details

Description

TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength:.
p = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity:  = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Com.

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Published: Feb 2, 2012 |