TSHG6200 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

TSHG6200 high speed infrared emitting diode by Vishay - Datasheet Preview

Datasheet Details

Part number	TSHG6200
Manufacturer	Vishay
File Size	104.63 KB
Description	High Speed Infrared Emitting Diode
Download	TSHG6200 Download (PDF)

General Description

TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Overview

www.vishay.com TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94.

Key Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Peak wavelength: λp = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Compliant to RoHS Directive 2002/95/EC an.

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