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TSHG6200 - High Speed Infrared Emitting Diode

Description

TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 10°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • High modulation bandwidth: fc = 18 MHz.
  • Good spectral matching with CMOS cameras.
  • Compliant to RoHS Directive 2002/95/EC an.

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Datasheet Details

Part number TSHG6200
Manufacturer Vishay
File Size 104.63 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHG6200 Datasheet

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Full PDF Text Transcription

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www.vishay.com TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8389 DESCRIPTION TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
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