TSHG6200 - High Speed Infrared Emitting Diode

Product Overview

Vishay Siliconix

Datasheet Details

Part number	TSHG6200
Manufacturer	Vishay Siliconix
File Size	104.63 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG6200 Datasheet
Additional preview pages of the TSHG6200 datasheet.

Product details

Description

TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Peak wavelength: λp = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Compliant to RoHS Directive 2002/95/EC an.

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Published: Apr 2, 2007 |