TSHG6200 Datasheet | Vishay

.vishay. Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Ga Al As Double Hetero 94 8389 DESCRIPTION TSHG6200 is an infrared, 850 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Features - Package type: leaded - Package form: T-1¾ - Dimensions (in mm): Ø 5 - Peak wavelength: λp = 850 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ϕ = ± 10° - Low forward voltage - Suitable for high pulse current operation - High modulation bandwidth: fc = 18 MHz - Good spectral matching with CMOS cameras - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note - - Please see document “Vishay Material Category Policy”: .vishay./doc?99902 APPLICATIONS - Infrared radiation source for operation with CMOS cameras - High speed IR data transmission PRODUCT SUMMARY PONENT TSHG6200 Ie (m W/sr) 180 Note - Test conditions see table “Basic Characteristics”...