TSHG5210 Datasheet PDF (High Speed Infrared Emitting Diode)

TSHG5210 - High Speed Infrared Emitting Diode

Description

TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength:.
p = 850 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity:  = ± 10°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 18 MHz.
Good spectral matching with CMOS cameras.
Com.

Datasheet Details

Part number	TSHG5210
Manufacturer	Vishay
File Size	101.74 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5210 Datasheet

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Full PDF Text Transcription

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www.vishay.com TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Published: Feb 2, 2012 |