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TSHG5410 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

Overview: www.DataSheet.co.kr TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double.

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General Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

in APPLICATIONS • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG5410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81811 Rev.

1.2, 08-Jul-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ TEST CONDITION SYMBOL VR IF VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 µs tp = 100 µs IFM IFSM PV Tj Tamb Tstg t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB Tsd RthJA www.DataSheet.co.kr TSHG5410

Key Features

  • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant.

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