TSHG5410 - High Speed Infrared Emitting Diode

Product Overview

Vishay Siliconix

Datasheet Details

Part number	TSHG5410
Manufacturer	Vishay Siliconix
File Size	161.68 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5410 Datasheet
Additional preview pages of the TSHG5410 datasheet.

Product details

Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Infrared radiation source for operation with CMOS cameras High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG5410 Note MOQ: min

Features

Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant.

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Published: Feb 2, 2012 |