TSHG5510 Datasheet High Speed Infrared Emitting Diode

Manufacturer: Vishay

TSHG5510 high speed infrared emitting diode by Vishay - Datasheet Preview

Datasheet Details

Part number	TSHG5510
Manufacturer	Vishay
File Size	88.13 KB
Description	High Speed Infrared Emitting Diode
Download	TSHG5510 Download (PDF)

General Description

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Overview

www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero.

Key Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 830 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 38°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching to Si photodetectors.
Complia.

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