TSHG5510 Datasheet | Vishay

.vishay. Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, Ga Al As Double Hetero DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in Ga Al As double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Features - Package type: leaded - Package form: T-1¾ - Dimensions (in mm): Ø 5 - Leads with stand-off - Peak wavelength: λp = 830 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ϕ = ± 38° - Low forward voltage - Suitable for high pulse current operation - High modulation bandwidth: fc = 24 MHz - Good spectral matching to Si photodetectors - pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS - Infrared radiation source for operation with CMOS cameras (illumination) - High speed IR data transmission PRODUCT SUMMARY PONENT TSHG5510 Ie (m W/sr) 32 Note - Test conditions see table “Basic Characteristics“ ϕ (deg) ± 38 λp (nm) 830 tr (ns) 15 ORDERING...