TSHG5510 Description
TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
TSHG5510 Key Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Leads with stand-off
- Peak wavelength: λp = 830 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 38°
- Low forward voltage
TSHG5510 Applications
- Infrared radiation source for operation with CMOS