TSHG5510 Datasheet PDF (High Speed Infrared Emitting Diode)

TSHG5510 - High Speed Infrared Emitting Diode

Description

TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

Package type: leaded.
Package form: T-1¾.
Dimensions (in mm): Ø 5.
Leads with stand-off.
Peak wavelength: λp = 830 nm.
High reliability.
High radiant power.
High radiant intensity.
Angle of half intensity: ϕ = ± 38°.
Low forward voltage.
Suitable for high pulse current operation.
High modulation bandwidth: fc = 24 MHz.
Good spectral matching to Si photodetectors.
Complia.

Datasheet Details

Part number	TSHG5510
Manufacturer	Vishay
File Size	88.13 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5510 Datasheet

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Full PDF Text Transcription

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www.vishay.com TSHG5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero 21061 DESCRIPTION TSHG5510 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Published: Feb 2, 2012 |