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TSHG6410 - High Speed Infrared Emitting Diode

Description

TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Features

  • Package type: leaded.
  • Package form: T-1¾.
  • Dimensions (in mm): Ø 5.
  • Peak wavelength: λp = 850 nm.
  • High reliability.
  • High radiant power.
  • High radiant intensity.
  • Angle of half intensity: ϕ = ± 15°.
  • Low forward voltage.
  • Suitable for high pulse current operation.
  • Good spectral matching with Si photodetectors.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?.

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Datasheet Details

Part number TSHG6410
Manufacturer Vishay
File Size 111.99 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHG6410 Datasheet

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Full PDF Text Transcription

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Datasheet Values Refer to PCN-OPT-1296-2023-REV-1 www.vishay.com TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology DESCRIPTION TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 850 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 15° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.
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