TSHG6410 Description
TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.
TSHG6410 Key Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 850 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 15°
- Low forward voltage
- Suitable for high pulse current operation