TSHG6410
TSHG6410 is High Speed Infrared Emitting Diode manufactured by Vishay.
Datasheet Values Refer to PCN-OPT-1296-2023-REV-1
.vishay.
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
DESCRIPTION
TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.
Features
- Package type: leaded
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 850 nm
- High reliability
- High radiant power
- High radiant intensity
- Angle of half intensity: ϕ = ± 15°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements
- Transmission systems according to Ir DA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 k Hz or 1.3 MHz)
PRODUCT SUMMARY
PONENT
Ie (m W/sr)
ϕ (°)
± 15
Note
- Test conditions see table “Basic Characteristics”
λp (nm) 850 tr (ns)...
