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TSHG5410 - High Speed Infrared Emitting Diode

Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

Infrared radiation source for operation with CMOS cameras High speed IR data transmission

Features

  • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant.

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Datasheet Details

Part number TSHG5410
Manufacturer Vishay
File Size 161.68 KB
Description High Speed Infrared Emitting Diode
Datasheet download datasheet TSHG5410 Datasheet

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Full PDF Text Transcription (Reference)

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