TSHG5410 - High Speed Infrared Emitting Diode

Vishay Siliconix

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Datasheet Details

Part number	TSHG5410
Manufacturer	Vishay Siliconix
File Size	161.68 KB
Description	High Speed Infrared Emitting Diode
Datasheet	TSHG5410_VishaySiliconix.pdf

TSHG5410 Product details

Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. Infrared radiation source for operation with CMOS cameras High speed IR data transmission PRODUCT SUMMARY COMPONENT TSHG5410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG5410 Note MOQ: min

Features

Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant.

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Published: Feb 2, 2012 |