Download TSHG6410 Datasheet PDF
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TSHG6410 Key Features

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Peak wavelength: λp = 850 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 15°
  • Low forward voltage
  • Suitable for high pulse current operation

TSHG6410 Description

TSHG6410 is an infrared, 850 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package.