S852TW
Features
D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz
D Low noise figure D High power gain
13 581 94 9280
13 652
13 570
S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter
S852TW Marking: W52 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150
- 65 to +150 Unit V V V m A m W °C °C
Tamb ≤ 125 °C
Maximum Thermal Resistance
Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W
Document Number 85052 Rev. 3, 20-Jan-99
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S852T/S852TW
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