WMJ028N10HGS mosfet equivalent, 100v n-channel enhancement mode power mosfet.
* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge
* Low RDS(ON)
* 100% EAS Guaranteed
Applications
RoH.
Features
* VDS= 100V, ID = 228A RDS(on) < 3mΩ @ VGS = 10V
* High Speed Power Switching
* Low Gate Charge .
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