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2SD999 - NPN EPITAXIAL SILICON TRANSISTOR

Features

  • Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A . ,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2.

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Datasheet Details

Part number 2SD999
Manufacturer WEJ
File Size 207.36 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SD999 Datasheet
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Full PDF Text Transcription

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RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3.
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