2SD999
2SD999 is NPN EPITAXIAL SILICON TRANSISTOR manufactured by WEJ.
RoHS 2SD999
2SD999 TRANSISTOR (NPN)
Features
Power dissipation
DPCM: 0.5 W (Tamb=25℃)
TCollector current
ICM: 1 A
.,LCollector-base voltage
V(BR)CBO:
30 V
Operating and storage junction temperature range
OTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
ICCollector-base breakdown voltage
Collector-emitter breakdown voltage
NEmitter-base breakdown voltage OCollector cut-off current REmitter cut-off current TDC current gain CCollector-emitter saturation voltage EBase-emitter saturation voltage LBase-emitter voltage ETransition frequency
Collector output capacitance
Symbol V(BR)CBO...
