Datasheet Details
| Part number | BAS216 |
|---|---|
| Manufacturer | WEJ |
| File Size | 139.50 KB |
| Description | DIODE |
| Datasheet |
 BAS216 Datasheet
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| Part number | BAS216 |
|---|---|
| Manufacturer | WEJ |
| File Size | 139.50 KB |
| Description | DIODE |
| Datasheet |
BAS216 Datasheet
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RoHS BAS216 TC1SS355 200mW SOD-323 SURFACE MOUNTSmall Outline Flat Lead Plastic Package DHigh Speed Switching Diode TAbsolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Value Units .,LPD Power Dissipation 200 mW TSTG Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature +150 °C VR Reverse Voltage 80 V OVRM Repetitive Peak Reverse Voltage 90 V IFM Forward Current 250 mA CIO Continuous Forward Current 150 mA IFRM Repetitive Peak Forward Current 500 mA These ratings are limiting values above which the serviceability of the diode may be impaired.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BAS216 | High-speed switching diode | NXP |
 |
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BAS216WS | High-speed switching diode | SEMTECH |
 |
BAS216WS | HIGH SPEED SWITCHING DIODE | EIC |
 |
BAS216WS | SILICON EPITAXIAL SWITCHING DIODE | CDIL |
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