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WEJ

BAV70DW Datasheet Preview

BAV70DW Datasheet

DIODE

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RoHS
BAV70DW
BAV70DW SWITCHING DIODE
DFEATURES
TPower dissipation
.,LPD: 200 mW (Tamb=25)
Collector current
IF: 150 mA
OCollector-base voltage
VR: 75 V
COperating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-363
NICMAKING: KJA
TROELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
CParameter
EReverse breakdown voltage
LReverse voltage leakage current
EForward voltage
JJunction capacitance
WEReveres recovery time
Symbol
V(BR) R
IR
VF
Cj
trr
Test conditions
IR= 100µA
VR=75V
VR=20V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR
RL=100
MIN MAX
75
2.5
0.025
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com




WEJ

BAV70DW Datasheet Preview

BAV70DW Datasheet

DIODE

No Preview Available !

RoHS
BAV70DW
WEJ ELECTRONIC CO.,LTD
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com


Part Number BAV70DW
Description DIODE
Maker WEJ
Total Page 2 Pages
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