Datasheet Details
| Part number | 2SK2611 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 538.17 KB |
| Description | Silicon N-Channel MOSFET |
| Download | 2SK2611 Download (PDF) |
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Overview: www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET.
| Part number | 2SK2611 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 538.17 KB |
| Description | Silicon N-Channel MOSFET |
| Download | 2SK2611 Download (PDF) |
|
|
|
This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 11 7 44 ±30 670 19.5 4.5 195 -55~150 300 Units V A A A V mJ mJ V/ ns W ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.64 62.5 Units ℃/W ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
www.DataSheet.in 2SK2611 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V Min ±30 500 2 - Type 0.48 15 1515 25 185 70 24 75 120 43 8 19 Max ±100 10 Unit nA V Drain cut -off current IDSS VDS=400V,Tc=125℃ 100 4 0.55 2055 30 235 150 57 µA Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time T
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SK2611 | Silicon N-Channel MOSFET | Toshiba Semiconductor |
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2SK2611 | N-Channel MOSFET | INCHANGE |
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2SK2611 | N-Channel Power MOSFET | nELL |
| Part Number | Description |
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