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WTPB16A60SW Datasheet, WINSEMI SEMICONDUCTOR

WTPB16A60SW Datasheet, WINSEMI SEMICONDUCTOR

WTPB16A60SW

datasheet Download (Size : 400.41KB)

WTPB16A60SW Datasheet

WTPB16A60SW thyristor

sensitive gate bi-directional triode thyristor.

WTPB16A60SW

datasheet Download (Size : 400.41KB)

WTPB16A60SW Datasheet

WTPB16A60SW Features and benefits

WTPB16A60SW Features and benefits


* Repetitive Peak off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=16A
* Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A
* High Commutation dV/dt..

WTPB16A60SW Application

WTPB16A60SW Application

These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power.

WTPB16A60SW Description

WTPB16A60SW Description

General purpose swiTJhing and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation contr.

Image gallery

WTPB16A60SW Page 1 WTPB16A60SW Page 2 WTPB16A60SW Page 3

TAGS

WTPB16A60SW
Sensitive
Gate
Bi-Directional
Triode
Thyristor
WINSEMI SEMICONDUCTOR

Manufacturer


WINSEMI SEMICONDUCTOR

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