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WINSEMI SEMICONDUCTOR

WTPB16A60SW Datasheet Preview

WTPB16A60SW Datasheet

Sensitive Gate Bi-Directional Triode Thyristor

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WTPB16A60SW
Sensitive Gate
Bi-Directional Triode Thyristor
Features
■ Repetitive Peak off-State Voltage: 600V
■ R.M.S On-State Current(IT(RMS)=16A
■ Low on-state voltage: VTM=1.55V(Max.)@ IT=22.5A
■ High Commutation dV/dt.
General Description
General purpose swiTJhing and phase control applications.
These devices are intended to be interfaced directly to micro-
controllers, logic integrated circuits and other low power gate
trigger circuits such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25unless otherwise specified)
Symbol
Parameter
Value Units
VDRM/VPRM
IT(RMS)
ITSM
I2t
Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)
Forward Current RMS (All Conduction Angles, TJ=58)
Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)
Circuit Fusing Considerations (tp= 10 ms)
600
16
160/168
144
V
A
A
A2s
PGM Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)
5W
PG(AV)
dI/dt
IFGM
Average Gate Power — Forward, (Over any 20ms period)
Critical rate of rise of on-state current
ITM = 20A; IG = 200mA; dIG/dt = 200mA/µs
TJ=125
Peak Gate Current — Forward, TJ = 125°C (20 µs, 120 PPS)
1W
50 A/μs
4A
VRGM
Peak Gate Voltage — Reverse, TJ= 125°C (20 µs, 120 PPS)
10 V
TJ, Junction Temperature
-40~125
Tstg Storage Temperature
-40~150
Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may
swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.6
- - 60
Units
/W
/W
Rev. B Nov.2008
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
T01-3




WINSEMI SEMICONDUCTOR

WTPB16A60SW Datasheet Preview

WTPB16A60SW Datasheet

Sensitive Gate Bi-Directional Triode Thyristor

No Preview Available !

www.DataSheet.in
WTPB16A60SW
8
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Symbol
Characteristics
Peak Forward or Reverse Blocking Current
IDRM//IRRM (VDRM=VRRM,)
TJ=25
TJ=125
VTM Forward “On” Voltage (Note2) (ITM = 22.5A tp=380μs)
Gate Trigger Current (Continuous dc)
IGT (VD = 12 Vdc, RL = 33 Ω)
VGT
Gate Trigger Voltage (Continuous dc)
(VD =12 Vdc, RL = 33 Ω)
T2+G+
T2+G-
T2-G-
T2+G+
T2+G-
T2-G-
VGD Gate threshold voltage( VD= VDRM,RL = 3.3 KΩ,TJ=125,)
dV/dt
IH
IL
Rd
Critical rate of rise of commutation Voltage (VD=0.67VDRM)
Holding Current (IT= 100 mA)
Latching current
(VD =12 Vdc,IGT=0.1A)
Dynamic resistance
T2+G+
T2+G-
T2-G-
Min Typ. Max Unit
- - 5 μA
- - 1 mA
- - 1.55 V
- - 10
- - 10 mA
- - 10
- - 1.2
- - 1.2 V
- - 1.2
0.2 - - V
40 -
- V/μs
- - 15 mA
- - 25
- - 30 mA
- - 25
- - 25 mΩ
Note 2. Forward current applied for 1 ms maximum duration, duty cycle
2/5
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.


Part Number WTPB16A60SW
Description Sensitive Gate Bi-Directional Triode Thyristor
Maker WINSEMI SEMICONDUCTOR
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