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WINSEMI SEMICONDUCTOR

WTPB4A60SW Datasheet Preview

WTPB4A60SW Datasheet

Bi-Directional Triode Thyristor

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WTPB4A60SW
Bi-Directional Triode Thyristor
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 4 A )
Low On-State Voltage (1.6V(Typ.) @ ITM)
High Commutation dv/dt
High Junction temperature(TJ=150)
General Description
Standard gate triggering Triac is suitable for direct coupling to
TTL, HTL, CMOS and application such as various logic
functions, low power AC switching applications, such as fan
speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (TJ= 25°C unless otherwise specified)
Symbol
Parameter
Condition
Ratings Units
VDRM/VRRM
I
T(RMS)
I
TSM
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
I2t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
T = 110 °C
J
One cycle, Peak value, non-
repetitive full cycle
50Hz
60Hz
T = 125 °C
J
T = 125 °C
J
600 V
4.0 A
30
A
31
5.1
5
1
4.0
7.0
-40~+150
-40~+150
A2s
W
W
A
V
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case(DC)
RθJA Thermal Resistance Junction to Ambient(DC)
Value
2.6
60
Units
/W
/W
Jan 2009. Rev. 0
Copyright @WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-1




WINSEMI SEMICONDUCTOR

WTPB4A60SW Datasheet Preview

WTPB4A60SW Datasheet

Bi-Directional Triode Thyristor

No Preview Available !

www.DataSheet.in
WTPB4A60SW
Electrical Characteristics (TC=25unless otherwise noted)
Symbol
Characteristics
Min Typ. Max Unit
IDRM/IRRM
off-state leakage current
(VAK= VDRM/VRRM Single phase, half wave)
TJ=25
-
-
5 μA
TJ=125
-
-
1 mA
VTM Forward “On” voltage (IT=5A, Inst. Measurement)
-
1.2 1.6
V
Gate trigger current (continuous dc)
IGT (VAK = 6 Vdc, RL = 10 Ω)
Note:1
T2+,G+
T2+,G-
T2-,G-
-
-
-
- 35
- 35 mA
- 35
Gate Trigger Voltage (Continuous dc) )
T2+,G+
-
- 1.5
VGT (VAK = 6 Vdc, RL = 10 Ω)
T2+,G- - - 1.5 V
Note:1
T2-,G-
- - 1.5
Gate threshold Voltage
VGD =1/2VDRM, RL = 3.3K Ω
TJ=1250.2
-
-V
Critical Rate of Rise of Off-State Voltage at
dv/dt
Commutation
TJ=12540
-
- V/μs
(VD=0.67VDRM ;gate open)
Note:2
IH Holding Current
- - 15 mA
IL latching current
Note 1: minimum IGT is guaranted at 5% of IGT max.
2: for both polarities of A2 referenced to A1.
- - 30 mA
Steady, all for your advance.
2/5


Part Number WTPB4A60SW
Description Bi-Directional Triode Thyristor
Maker WINSEMI SEMICONDUCTOR
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