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WTPB4A60SW Datasheet Bi-Directional Triode Thyristor

Manufacturer: WINSEMI SEMICONDUCTOR

Datasheet Details

Part number WTPB4A60SW
Manufacturer WINSEMI SEMICONDUCTOR
File Size 507.44 KB
Description Bi-Directional Triode Thyristor
Download WTPB4A60SW Download (PDF)

General Description

Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.

Absolute Maximum Ratings (T = J 25°C unless otherwise specified) Symbol VDRM /VRRM IT(RMS) ITSM 2 Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current TJ = 110 °C Condition Ratings Units 600 4.0 50Hz 60Hz 30 A 31 5.1 5 A2 s W W A V ℃ ℃ V A One cycle, Peak value, nonrepetitive full cycle It PGM PG(AV) IGM VGM TJ TSTG I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature TJ = 125 °C TJ = 125 °C 1 4.0 7.0 -40~+150 -40~+150 Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Value 2.6 60 Units ℃/W ℃/W Jan 2009.

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Overview

www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode.

Key Features

  • Repetitive Peak Off-State Voltage : 600V R. M. S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.6V(Typ. ) @ ITM) High Commutation dv/dt High Junction temperature(TJ=150℃) General.