WeEn Semiconductors WNSC2D201200W
Silicon Carbide Diode
| Part No. | WNSC2D201200W |
|---|---|
| Datasheet | WNSC2D201200W Download |
| Manufacturer |  WeEn Semiconductors |
| Description | Silicon Carbide Diode |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Highly stable switching performance● High forward surge capability IFSM
● Extremely fast reverse recovery time
● Superior in efficiency to Silicon Diode alternatives
● Reduced losses in associated MOSFET
● Reduced EMI
● Reduced cooling requirements
● RoHS compliant
● High junction operating temperature capability (Tj(max) = 175 °C) 3.
APPLICATIONS
● Switching mode power supplies● UPS & energy storage systems
● PV inverter and MPPT circuit
● Battery formation systems
● EV chargers
● Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF continuous forward current Tj junction temperature Symbol Parameter Static characteristics Tmb ≤ 144 °C, DC; Fig. 2 Conditions VF forward voltage Dynamic characteristics IF = 20 A; Tj = 25 °C; Fig. 5 IF = 20 A; Tj = 150 °C; Fig. 5 IF = 20 A; Tj = 175 °C; Fig. 5 Qr recovered charge IF = 20 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; Fig.
