Datasheet4U Logo Datasheet4U.com

WNSC2M150120TB - N-Channel Silicon Carbide MOSFET

General Description

Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

2.

Key Features

  • Top side cooling structure.
  • Kelvin source configuration.
  • Low specific on-resistance.
  • Optimized dynamic performance.
  • Robust gate design.
  • 0V turn-off VGS for simple gate driver.
  • 100% UIS Tested.
  • Easy to parallel.
  • RoHS compliant RoHS halogen-Free 3.

📥 Download Datasheet

Datasheet Details

Part number WNSC2M150120TB
Manufacturer WeEn
File Size 856.58 KB
Description N-Channel Silicon Carbide MOSFET
Datasheet download datasheet WNSC2M150120TB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNSC2M150120TB N-Channel Silicon Carbide MOSFET Rev.01 - 18 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems. 2. Features and benefits • Top side cooling structure • Kelvin source configuration • Low specific on-resistance • Optimized dynamic performance • Robust gate design • 0V turn-off VGS for simple gate driver • 100% UIS Tested • Easy to parallel • RoHS compliant RoHS halogen-Free 3. Applications • Switching mode power supplies • UPS and energy storage systems • Battery formation instrument • PV MPPT and inverters • EV Chargers • Welding machines • Motor Drives 4. Quick reference data Table 1.