2SB1182 Overview
IC (mA) −0.5 COLLECTOR CURRENT : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN.
| Part number | 2SB1182 |
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| Datasheet | 2SB1182_Weitron.pdf |
| File Size | 926.13 KB |
| Manufacturer | Weitron |
| Description | PNP PLASTIC ENCAPSULATE TRANSISTORS |
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IC (mA) −0.5 COLLECTOR CURRENT : VBE (V) 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics 500 DC CURRENT GAIN.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1182 | Medium power Transistor | Rohm |
| 2SB1182 | Silicon PNP Power Transistor | Inchange Semiconductor | |
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2SB1182 | Medium Power Transistor | Kexin |