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2SB1182 - PNP PLASTIC ENCAPSULATE TRANSISTORS

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Part number 2SB1182
Manufacturer Weitron
File Size 926.13 KB
Description PNP PLASTIC ENCAPSULATE TRANSISTORS
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2SB1182 PNP PLASTIC ENCAPSULATE TRA NSISTORS P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -40 -32 -5.0 -2.0 1.5 +150 -55 to +150 Unit V V V A W ˚C ˚C ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-50µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min -40 -32 -5.0 Typ Max -1.0 -1.0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=-1.0mA Emitter-Base Breakdown Voltage IE=-50µA VCB=-20V VEB =-4.0V WEITRON http://www.weitron.com.
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