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Weitron Technology
Weitron Technology

2SB649A Datasheet Preview

2SB649A Datasheet

PNP Epitaxial Planar Transistors

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2SB649A pdf
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
2SB649/2SB649A
1. EMITTER
2. COLLECTOR
3. BASE
1
23
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Symbol
Collector-Emitter Voltage
VCBO
2SB649
2SB649A
-180
Collector-Base Voltage
VCEO
-120
-160
Emitter-Base Voltage
VEBOwww.DataSheet4U.com
6.0
Collector Current
IC -1.5
Power Disspation
PD 1.0
Junction Temperature
Tj +150
Storage Temperature
Tstg -55 to +150
Unit
V
V
V
A
W
˚C
˚C
WEITRON
http://www.weitron.com.tw
1/5
21-Mar-06



Weitron Technology
Weitron Technology

2SB649A Datasheet Preview

2SB649A Datasheet

PNP Epitaxial Planar Transistors

No Preview Available !

2SB649A pdf
2SB649/2SB649A
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Collector-Emitter Breakdown Voltage
IC = -1.0mA, IE = 0
Collector-Base Breakdown Voltage
IC = -10mA, IB = 0
2SB649
2SB649A
Emitter-Base Breakdown Voltage
IC = 0, IE = -1.0mA
Collector Cutoff Current
VCB = -160V, IE = 0
Emitter Cutoff Current
VEB = -4.0V, IC= 0
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Min
-180
-120
-160
-5.0
-
-
Typ
-
-
-
-
-
Max
-
Unit
V
-V
-V
-10 µA
-10 µA
ON CHARACTERISTICS
DC Current Gain
VCE = -5.0V, IC = -150mA
2SB649
2SB649A
VCE = -5.0V, IC = -500mA
Collector-Emitter Saturation Voltage
IC = -500mA, IB = -50mA
Base-Emitter Voltage
VCE = -5.0V, I C = -150mA
Transition frequency
VCE = -5.0V, I C = -150mA
Collecotr Output Capacitance
VCB = -10V, I E = 0, f = 1MHz
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
60
60
30
-
-
-
-
- 320
200 -
--
- -1.0 V
- -1.5 V
140 - MHz
27 - pF
CLASSIFICATION OF hFE(1)
Rank
Range
B
60-120
C
100-200
WEITRON
http://www.weitron.com.tw
2/5
D
160-320
21-Mar-06


Part Number 2SB649A
Description PNP Epitaxial Planar Transistors
Maker Weitron Technology
Total Page 5 Pages
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