Weitron Technology 2SB1260
PNP Plastic-Encapsulate Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature Value -80 -80 -5.0 1.0 2.0 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) W PC T j , Tstg % C Device Marking 2SB1260=ZLELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -50 µAdc, IC=0) Collector Cutoff Current (VCB= -60 Vdc, IE=0) Emitter Cutoff Current (VEB=-4.0 Vdc, IC =0) 1.FR-5=1.0 x 0.75 x 0.062 in. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -80 -80 -5.0 Max -1 -1 Unit Vdc Vdc Vdc uAdc uAdc WE ITR O N 2SB1260ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Sa...