2SB1260 - PNP Plastic-Encapsulate Transistor

Weitron Technology

Datasheet Details

Part number	2SB1260
Manufacturer	Weitron Technology
File Size	126.95 KB
Description	PNP Plastic-Encapsulate Transistor
Datasheet	2SB1260 Datasheet

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2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC I CP Collector Power Dissipation Junction Temperature, Storage Temperature www.DataSheet4U.com Value -80 -80 -5.0 1.0 2.0 0.5 150, -55 to +150 Unit Vdc Vdc Vdc Adc(DC) Adc (Pulse) W PC T j , Tstg % C Device Marking 2SB1260=ZL ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -50 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= -50 µAdc, IC=0) Collector Cutoff Current (VCB= -60 Vdc, IE=0) Emitter Cutoff Current (VEB=-4.0 Vdc, IC =0) 1.FR-5=1.0 x 0.75 x 0.