| Part Number | 2SB1260 Datasheet |
|---|---|
| Manufacturer | Micro Commercial Components |
| Overview |
2SB1260
Features
• Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compl.
* Halogen Free. “Green” Device (Note 1) * Moisture Sensitivity Level 1 * Epoxy Meets UL 94 V-0 Flammability Rating * Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25°C Unless Otherwise Specified * Operating Junction Temperature R. |
2SB1260 Datasheet and Specifications PDF
The 2SB1260 is a PNP Plastic-Encapsulate Transistors.
| Part Number | 2SB1260 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | ROHM |
| Overview |
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary NPN .
1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD1733 3) Low VCE(sat)
VCE(sat)= -0.4V Max. (IC/IB= -500mA/ -50mA)
4) Lead Free/RoHS Compliant.
2SB1260 (SC-62) |
| Part Number | 2SB1260 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Power Transistor(-80V,-1A)
FEATURES
High breakdown voltage and high current. BVCEO=-80V,IC=-1A
Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. RoHS compliant with Halogen-free
AP.
* High breakdown voltage and high current. BVCEO=-80V,IC=-1A * Good hFEVLinearity. * Low VCE(sat). * Complements the 2SD1898. * RoHS compliant with Halogen-free APPLICATIONS * Epitaxial planar type PNP silicon transistor ORDERING INFORMATION Type No. 2SB1260-Q 2SB1260-R Marking ZL ZL Product Spe. |
| Part Number | 2SB1260 Datasheet |
|---|---|
| Description | PNP Plastic-Encapsulate Transistor |
| Manufacturer | Weitron Technology |
| Overview | 2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Volt. rwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC=-0.1 Adc, VCE=-3.0 Vdc) Collector-Emitter Saturation Voltage (IC=-500 mAdc, IB=-50mAdc) Transition Frequency (IC=-50 mAdc, VCE=-5.0 Vdc,f=30 MHz) hFE VCE(sat) fT 82 390 -0.4 Vdc MHz 80 CLASSIF. |