Datasheet4U Logo Datasheet4U.com

2SB1260 - POWER TRANSISTOR

General Description

The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.

Key Features

  • High breakdown voltage and high current. BVCEO= -80V, IC= -1A.
  • Good hFE linearity.
  • Low VCE(SAT) 1 TO-252.
  • Pb-free plating product number: 2SB1260L.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1260 Power Transistor Rohm
2SB1260 Power Transistor GME
2SB1260 PNP Transistor HOTTECH
2SB1260 Plastic-Encapsulate Transistors WILLAS
2SB1260 PNP Transistor JinYu

Other Datasheets by Unisonic Technologies

Part Number Description
2SB1202 PNP PLANAR TRANSISTOR
2SB1017 PNP Transistor
2SB1116 PNP EPITAXIAL SILICON TRANSISTOR
2SB1116A PNP EPITAXIAL SILICON TRANSISTOR
2SB1132 MEDIUM POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) 1 TO-252 *Pb-free plating product number: 2SB1260L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T www.DataSheet4U.