Unisonic Technologies 2SB1260
2SB1260 is a epitaxial planar type PNP silicon transistor.| Part No. | 2SB1260 |
|---|---|
| Datasheet | 2SB1260 Download |
| Manufacturer |  Unisonic Technologies |
| Description | POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB1260L-x-AA3-R 2SB1260G-x-AA3-R SOT-223 2SB1260L-x-AB3-R 2SB1260G-x-AB3-R SOT-89 2SB1260L-x-TN3-R 2SB1260G-x-TN3-R TO-252 Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tape Reel
● MARKING Packing SOT-223 SOT-89 TO-252 Copyright © 2017 Unisonic Technologies Co., Ltd Marking 1 of 4 QW-R208-017.H 2SB1260 PNP SILICON TRANSISTOR
● ABSOLUATE MAXIUM RATINGS ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage Collector -Emitter Voltage VCBO -80 V VCEO -80 V Emitter -Base Voltage VEBO -5 V Peak Collector Current (single pulse, Pw=100ms) ICM -2 A DC Collector Current IC SOT-223 -1 A 1 W Power Dissipation SOT-89 PD 0.5 W TO-252 1.9 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note 1.
