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2SB1260 - PNP Transistors

Key Features

  • High breakdown voltage and high current. BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Transistors Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(Pulse) Collector power dissipation Junction temperature Storage temperature.
  • Single pulse, Pw=100ms Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitt.

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SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat).