Datasheet Summary
SMD Type
Power Transistor 2SB1260
Features
High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor
Transistors...
| Manufacturer | Part Number | Description |
|---|---|---|
ROHM |
2SB1260 | Power Transistor |
Galaxy Microelectronics |
2SB1260 | Power Transistor |
WILLAS |
2SB1260 | Plastic-Encapsulate Transistors |
JCET |
2SB1260 | PNP Transistor |
SeCoS Halbleitertechnologie GmbH |
2SB1260 | PNP Plastic Encapsulated Transistor |