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2SB1261-Z - PNP Transistors

Key Features

  • s.
  • High hFE hFE = 100 to 400.
  • Low VCE(sat) VCE(sat) ≤ 0.3 V PNP Transistors 2SB1261-Z TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 Transistors 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 3.80 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 + 9.70 0.2 -0.2 2.3 4 .60 +0.15 -0.15.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO.

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SMD Type ■ Features ● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V PNP Transistors 2SB1261-Z TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 Transistors 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 3.80 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .5 0 -0.1 + 9.70 0.2 -0.2 2.3 4 .60 +0.15 -0.15 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Base Current VEBO -7 IC -3 ICP -5 IB -0.