| Part number | 2SB1261-K |
|---|---|
| Download | 2SB1261-K Datasheet (PDF) |
| File Size | 211.85 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
NEC |
2SB1261-Z | PNP SILICON EPITAXIAL TRANSISTOR |
TRANSYS Electronics Limited |
2SB1261-Z | Plastic-Encapsulate Transistors |
Kexin Semiconductor |
2SB1261-Z | PNP Transistors |
LGE |
2SB1261 | PNP Transistor |
Galaxy Microelectronics |
2SB1261 | PNP Epitaxial Planar Silicon Transistors |
·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·plement to Type 2SD1899-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors Tj=25℃ unless otherwise specified SYMBOL...
