Datasheet Details
| Part number | 2SB1261-K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.85 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SB1261-K-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistors.
| Part number | 2SB1261-K |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.85 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SB1261-K-InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1261-K isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -100μA ;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB1261-Z | PNP SILICON EPITAXIAL TRANSISTOR | NEC |
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2SB1261-Z | Plastic-Encapsulate Transistors | TRANSYS Electronics Limited |
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2SB1261-Z | PNP Transistors | Kexin |
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