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2SB1261 - PNP Epitaxial Planar Silicon Transistors

Key Features

  • z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261.

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PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1261 SOT-89 Package Code SOT-89 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO VEBO IC ICP IB PC Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Base current Collector Power Dissipation Tj ,Tstg Junction and Storage temperature range *1: When mountef on a 40*40*0.7mm ceramic board. -60 -7 -3 -5 -0.5 0.5 2 *1 -55 to +150 V V A A A W ℃ E126 Rev.A www.gmicroelec.