2SB1261 Description
Features Epitaxial planar die construction High hFE Low VCE(sat) PNP Silicon Epitaxial Planar Transistor 2SB1261 Mechanic al Data Case: UL flammability classification rating 94V-0 Terminals: March 2023 [2.0] .gmesemi.
2SB1261 Key Features
- Epitaxial planar die construction
- High hFE
- Low VCE(sat)
- Case: TO-252
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
- 55 ~ +150 -55 ~ +150
- DC Current Gain
- VCE = -2V, IC = -2A
- Collector-emitter Saturation Voltage