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2SB1261-Z - PNP SILICON EPITAXIAL TRANSISTOR

General Description

Switching, especially in Hybrid Integrated Circuits.

Key Features

  • High hFE hFE = 100 to 400.
  • Low VCE(sat) VCE(sat) ≤ 0.3 V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total Power Dissipation (TC = 25°C) Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT1 PT2 Tj Tstg −60 −60 −7.0 −3.0 −5.0 −0.5 2.0 10 150 −55 to +150 V V V A A A W W °C °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. When mounted on ceramic substrate of 7.