2SB1261-Z Description
The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
2SB1261-Z Key Features
- High hFE hFE = 100 to 400
- Low VCE(sat) VCE(sat) ≤ 0.3 V
| Part number | 2SB1261-Z |
|---|---|
| Download | 2SB1261-Z Datasheet (PDF) |
| File Size | 1.31 MB |
| Manufacturer | NEC |
| Description | PNP SILICON EPITAXIAL TRANSISTOR |
|
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
TRANSYS Electronics Limited |
2SB1261-Z | Plastic-Encapsulate Transistors |
Kexin Semiconductor |
2SB1261-Z | PNP Transistors |
| 2SB1261-K | Silicon NPN Power Transistor | |
LGE |
2SB1261 | PNP Transistor |
Galaxy Microelectronics |
2SB1261 | PNP Epitaxial Planar Silicon Transistors |
The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.