| Part Number | 2SB1261-Z Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
■ Features
● High hFE hFE = 100 to 400 ● Low VCE(sat) VCE(sat) ≤ 0.3 V
PNP Transistors 2SB1261-Z
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
Transistors
2.30 +0.1 -0.1
0.50 +0.8 -0.7
Unit: mm
+.
* High hFE hFE = 100 to 400 * Low VCE(sat) VCE(sat) ≤ 0.3 V PNP Transistors 2SB1261-Z TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 Transistors 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 1.50 0.15 -0.15 3.80 + 5.55 0.15 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 + 0.15 0 .5 0 -0.15 + 0.28 1 .. |
2SB1261-Z Datasheet and Specifications PDF
The 2SB1261-Z is a PNP Transistors.
| Part Number | 2SB1261-Z Datasheet |
|---|---|
| Description | PNP SILICON EPITAXIAL TRANSISTOR |
| Manufacturer | NEC |
| Overview |
The 2SB1261-Z is designed for Audio Frequency Amplifier and
Switching, especially in Hybrid Integrated Circuits.
FEATURES • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V
ABSOLUTE MAXIMUM.
* High hFE hFE = 100 to 400 * Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25°C) Note 2 Total. |
| Part Number | 2SB1261-Z Datasheet |
|---|---|
| Description | Plastic-Encapsulate Transistors |
| Manufacturer | TRANSYS Electronics Limited |
| Overview | Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTO. Power dissipation TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (T. |