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2SB1261 - PNP Transistor

Key Features

  • z Low VCE(sat) z High DC Current Gain.

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Datasheet Details

Part number 2SB1261
Manufacturer JCET
File Size 404.08 KB
Description PNP Transistor
Datasheet download datasheet 2SB1261 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -7 -3 1 125 150 -55~+150 1. BASE 2. COLLECTOR 3.