JCET 2SB1260
PNP Transistor
FEATURES
z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements the 2SD1898 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTERMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -80 -80 -5 -1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symb