Galaxy Century Microelectronics 2SB1260
Power Transistor
| Part No. | 2SB1260 |
|---|---|
| Datasheet | 2SB1260 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage and high current. BVCEO=-80V,IC=-1A● Good hFEVLinearity.
● Low VCE(sat).
● Complements the 2SD1898.
● RoHS compliant with Halogen-free
APPLICATIONS
● Epitaxial planar type PNP silicon transistor ORDERING INFORMATION Type No. 2SB1260-Q 2SB1260-R Marking ZL ZL Product Specification 2SB1260 SOT-89 Package Code SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –DC -Pulse -80 V -80 V -5 V -1 A -2 Pc Collector power Dissipation 0.5 W Tj Junction Temperature Tstg Storage Temperature *1: When mountef on a 40*40*0.7mm ceramic board. 150 ℃ -55 to +150 ℃ STM0236A 1 Product Specification Power Transistor(-80V,-1A) 2SB1260ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50μA IE=0 -80 V Collector-emitter break...
