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2SB1260 - Power Transistor

Key Features

  • z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements the 2SD1898. Pb Lead-free.

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Power Transistor(-80V,-1A) FEATURES z High breakdown voltage and high current. BVCEO=-80V,IC=-1A z Good hFEVLinearity. z Low VCE(sat). z Complements the 2SD1898. Pb Lead-free APPLICATIONS z Epitaxial planar type PNP silicon transistor Production specification 2SB1260 SOT-89 ORDERING INFORMATION Type No. Marking 2SB1260 ZL Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC Pc Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –DC -Pulse Collector power Dissipation -80 -80 -5 -1 -2 0.5 2 *1 Tj Junction Temperature 150 Tstg Storage Temperature *1: When mountef on a 40*40*0.7mm ceramic board. -55 to +150 Unit V V V A W ℃ ℃ E045 Rev.A www.gmicroelec.