• Part: 2SB1260
  • Description: Power Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 364.92 KB
Download 2SB1260 Datasheet PDF
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Datasheet Summary

Power Transistor(-80V,-1A) Features - High breakdown voltage and high current. BVCEO=-80V,IC=-1A - Good hFEVLinearity. - Low VCE(sat). - plements the 2SD1898. - RoHS pliant with Halogen-free APPLICATIONS - Epitaxial planar type PNP silicon transistor ORDERING INFORMATION Type No. 2SB1260-Q 2SB1260-R Marking ZL ZL Product Specification SOT-89 Package Code SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - DC -Pulse -80 -80 -5 -1...