2SB1260 Overview
Power Transistor(-80V,-1A).
2SB1260 Key Features
- High breakdown voltage and high current. BVCEO=-80V,IC=-1A
- Good hFEVLinearity
- Low VCE(sat)
- plements the 2SD1898
- RoHS pliant with Halogen-free
| Part number | 2SB1260 |
|---|---|
| Datasheet | 2SB1260-GME.pdf |
| File Size | 364.92 KB |
| Manufacturer | Galaxy Microelectronics |
| Description | Power Transistor |
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Power Transistor(-80V,-1A).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SB1260 | Power Transistor | Rohm |
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2SB1260 | Plastic-Encapsulate Transistors | WILLAS |
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2SB1260 | PNP Transistors | Kexin |
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2SB1260 | PNP Transistor | JCET |
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2SB1260 | PNP Plastic Encapsulated Transistor | SeCoS |
See all Galaxy Microelectronics datasheets
| Part Number | Description |
|---|---|
| 2SB1261 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1202 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1216 | PNP Epitaxial Planar Silicon Transistors |
| 2SB1216I | PNP Epitaxial Planar Silicon Transistors |
| 2SB1218A | PNP Silicon Transistor |
| 2SB1240 | Medium Power Transistor |
| 2SB1241D | Power Transistor |
| 2SB1241I | Power Transistor |
| 2SB1243 | Power Transistor |
| 2SB1274 | PNP Epitaxial Planar Silicon Transistors |