2SB1261 - PNP Epitaxial Silicon Transistor

JILIN SINO

Key Features

High hFE：hFE=-100-400.
Low VCE(sat)：VCE(sat) ≤ 0.3 V.
RoHS product TO-126 D-PAK ORDER.

2SB1261 pnp epitaxial silicon transistor by JILIN SINO - Datasheet Preview

Datasheet Details

Part number	2SB1261
Manufacturer	JILIN SINO
File Size	545.73 KB
Description	PNP Epitaxial Silicon Transistor
Datasheet	2SB1261 Datasheet

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Full PDF Text Transcription (Reference)

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PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS IC VCEO PC -3A -60V 2W  、 APPLICATIONS  Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.  ：hFE=-100-400  ：VCE(sat) ≤ 0.3 V  （RoHS） Package FEATURES  High hFE：hFE=-100-400  Low VCE(sat)：VCE(sat) ≤ 0.