2SB1261 Description
PNP 硅外延晶体管 PNP Epitaxial Silicon Transistor R 2SB1261 主要参数 MAIN CHARACTERISTICS IC VCEO PC -3A -60V 2W 用途 用于音频放大器、开关及在混合集成 电路 APPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. 产品特性 高放大：hFE=-100-400 低压降：VCE(sat) ≤ 0.3 V 环保（RoHS）产品 封装 Package.
2SB1261 Key Features
- High hFE：hFE=-100-400
- Low VCE(sat)：VCE(sat) ≤ 0.3 V
- RoHS product
- 60 -60 -7 -3 -5 -0.5 10 2 150 -55~+150
- 12.5 ℃/W
- ICBO IEBO hFE1
- CE(sat)
- BE(sat) fT
- Pulse Test: PW≤350us, Duty Cycle≤2%
- V V MHz μS μS μS
2SB1261 Applications
- Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits