• Part: 2SB1261
  • Description: PNP Transistor
  • Manufacturer: LGE
  • Size: 296.75 KB
Download 2SB1261 Datasheet PDF
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Datasheet Summary

Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features — High hFE hFE=100 to 400 — Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -3 PD Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature -55-150 Units V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter...