WTC2301 Datasheet | Weitron Technology

P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT -2.3 AMPERES DRAIN SOURCE VOLTAGE -20 VOLTAGE Features : - Super High Dense Cell Design For Low R DS(ON) R DS(ON) <100mΩ @V GS =-4.5V - Rugged and Reliable - Simple Drive Requirement - SOT-23 Package SOURCE 3 1 2 SOT-23 Applications - Power Management in Notebook puter - Portable Equipment - Battery Powered System Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1,2 Unless Otherwise Specified) Symbol VDS VGS ID I DM PD R θ JA R θJC Ta Tc TJ T stg Value -20 ±8 -2.3 -8 0.9 0.57 140 100 150 150 150 -55~+150 Unit V A A W ˚C...