WTC2302 Datasheet | Weitron Technology

N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.3 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features : - Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@VGS =4.5V - Rugged and Reliable - Simple Drive Requirement - SOT-23 Package SOURCE 3 1 2 SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 Pulsed Drain Current 1, 2 Total Power Dissipation (TA =25°C ) Maximum Junction-ambient 3 (T A Unless Otherwise Specified) Symbol V DS VG S ID IDM PD R θJA T J , T s tg Value 20 ±8 2.3 8 0.9 145 -55~+150 Unit V A A W °C /W °C Operating Junction and Storage Temperature...