WTC2304 Datasheet | Weitron Technology

N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 2.7 AMPERS DRAIN SOUCE VOLTAGE 25 VOLTAGE .. Features : 2 SOURCE 3 1 2 - Super High Dense Cell Design For Low RDS(ON) RDS(ON)<117mΩ @VGS=10V - Rugged and Reliable Application: - Capable of 2.5V Gate Drive - Simple Drive Requirement - SOT-23 Package SOT-23 Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 ,VGS@4.5V(TA ,VGS@4.5V(TA Pulsed Drain Current1,2 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Unless Otherwise Specified) Symbol VDS VGS ID IDM PD R Value 20 ±12 3.2 2.6 10 1.38 90 -55~+150 Unit W ℃/W...