WTC2309 Description
WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2.
WTC2309 Key Features
- Super High Dense Cell Design For Low R DS(ON) R DS(ON) <75m Ω@V GS =-10V -Rugged and Reliable -Simple Drive Requirement
- 30 ±20 -3.7 -3.0 -12 1.38 90 -55~+150
- V ns nC
- 10V -7.0V
- 10V -7.0V
- I D ,DRAIN CURRENT (A)
- 5.0V -4.5V
- 5.0V -4.5V
- V DS ,DRAIN-TO-SOURCE VOLTAGE(V)