Datasheet4U Logo Datasheet4U.com

WTC2309 Enhancement Mode Power MOSFET

WTC2309 Description

WTC2309 P-Channel Enhancement Mode Power MOSFET 1 GATE SOURCE 3 DRAIN DRAIN CURRENT -3.7 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 2 www.DataSheet4.

WTC2309 Features

* 3 1 2
* Super High Dense Cell Design For Low R DS(ON) R DS(ON)

📥 Download Datasheet

Preview of WTC2309 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
WTC2309
Manufacturer
Weitron Technology
File Size
427.01 KB
Datasheet
WTC2309_WeitronTechnology.pdf
Description
Enhancement Mode Power MOSFET

📁 Related Datasheet

  • WTC02SK - 2-channel capacitive inductive touch button chip (WINCOM)
  • WTC02SP - 2-Channel Capacitive-Sensing Touch Button Chip (WINCOM)
  • WTC1006BSI - 6-channel capacitive touch-sensitive button chip (WINCOM)
  • WTC1008BSI - 8-channel capacitive inductive touch button chip (WINCOM)
  • WTC401SPI - 4 keys + 1 roller slider capacitive touch sensing chip (WINCOM)
  • WTC6104BSI - 4-channel capacitive inductive touch button chip (ETC)
  • WTC6104BSI-L - 4-channel capacitive inductive touch button chip (ETC)
  • WTC6104DNI - 4-channel capacitive inductive touch button chip (WINCOM)

📌 All Tags

Weitron Technology WTC2309-like datasheet