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WTC2312 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Super High Dense Cell Design For Low RDS(ON) RDS(ON).

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Datasheet Details

Part number WTC2312
Manufacturer Weitron Technology
File Size 2.37 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet WTC2312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V * Capable of 2.5V gate drive * Rugged and Reliable * Lower On-Resistance 2 SOURCE 3 1 2 SOT-23 Application: * Power Management in Notebook Computer. * Portable Equipment. * Battery Powered System. Maximum Ratings(TA=25℃ Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 ,VGS@4.5V(TA=25°C) ,VGS@4.