WTD1386 Description
WTD1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2.
WTD1386 Key Features
- Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A)
- Excellent DC Current Gain Characteristics
- Case : Molded Plastic
- Weight : 0.925 grams