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Weitron Technology

WTD1386 Datasheet Preview

WTD1386 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

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PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features:
* Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A)
* Excellent DC Current Gain Characteristics
Mechanical Data:
* Case : Molded Plastic
* Weight : 0.925 grams
WTD1386
1.BASE
2.COLLECTOR
3.EMITTER
1 23
D-PAK(TO-252)
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
VCEO
Collector to Base Voltage
Collector Current
Total Device Disspation TC = 25°C
Junction Temperature
Storage Temperature
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Tstg
Value
-30
-20
-6
-5
-10
20
+150
-55 to +150
Unit
V
V
V
A
W
˚C
˚C
Device Marking
WTD1386 = 1386
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
1/4
09-Sep-05




Weitron Technology

WTD1386 Datasheet Preview

WTD1386 Datasheet

PNP EPITAXIAL PLANAR TRANSISTOR

No Preview Available !

WTD1386
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=-50µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
IE=-50µA, IC=0
Collector Cut-Off Current
VCB=-20V, IE=0
Emitter-Cut-Off Current
VEB=-5V, IC=0
Symbol
BVCBO
Min
-30
Typ
-
Max
-
Unit
V
BVCEO
-20
-
-
V
BVEBO
-6
-
-
V
ICBO -
IEBO -
- -500 nA
- -500 nA
ON CHARACTERISTICS1
DC Current Gain
VCE=-2V, IC=-0.5A
hFE
Collector-Emitter Saturation Voltage
IC=-4A, IB=-0.1A
VCE(sat)
Note 1.Pulse Test : Pulse width ≤ 380µs, Duty cycle ≤ 2%.
82
-
- 580 -
- -1.0 V
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-6V, IE=50mA, f=30MHz
Output Capacitance
VCB=-20V, IE=0, f=1MHz
fT - 120 - MHz
Cob - 60 - pF
CLASSIFICATION OF hFE
Rank
P
Range
82 - 180
Q
120 - 270
R
180 - 390
E
370 - 580
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
2/4
09-Sep-05


Part Number WTD1386
Description PNP EPITAXIAL PLANAR TRANSISTOR
Maker Weitron Technology
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