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WTD1386 - PNP EPITAXIAL PLANAR TRANSISTOR

Features

  • Low VCE(sat) = -0.55(Typ. ) (IC/IB=-4A/-0.1A).
  • Excellent DC Current Gain Characteristics 1 D-PAK(TO-252) Mechanical Data:.
  • Case : Molded Plastic.
  • Weight : 0.925 grams.

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Datasheet Details

Part number WTD1386
Manufacturer Weitron Technology
File Size 197.94 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet WTD1386 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTD1386 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Low VCE(sat) = -0.55(Typ.) (IC/IB=-4A/-0.1A) * Excellent DC Current Gain Characteristics 1 D-PAK(TO-252) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage Collector Current Total Device Disspation TC = 25°C Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) PD Tj Tstg Value -30 -20 -6 -5 -10 20 +150 -55 to +150 Unit V V V A W ˚C ˚C Device Marking WTD1386 = 1386 WEITRON http://www.weitron.com.tw www.DataSheet.
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