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WTD40N03
Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN
P b Lead(Pb)-Free
1 GATE 2
DRAIN CURRENT -15 AMPERES DRAIN SOURCE VOLTAGE -60 VOLTAGE
Features:
R DS(ON) <90m Ω @V GS =-10V *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *TO-252 Package
*Super High Dense Cell Design For Low R DS(ON)
SOURCE
4 1 1. GATE 2.4 DRAIN 3. SOURCE 2
3
D-PAK / (TO-252)
Maximum Ratings(Ta=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, (VGS@10V, TC=25˚C) , (VGS@10V, TC=100˚C) Pulsed Drain Current
1
Symbol VDS VGS ID IDM PD RθJC RθJA TJ,Tstg
Value 30 ±20 -20 -13 150 50 2.
WTD40N03 Datasheet
