WTM1797
WTM1797 is EPITAXIAL PLANAR TRANSISTOR manufactured by Weitron Technology.
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
Features
1. BASE 2. COLLECTOR 3. EMITTER
- Low saturation voltage
- Excellent DC current gain characteristics
- plements to 2SC4672
SOT-89
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value -50 -50 -6 -2 500 150 -55-150 Units V V V A m W ℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage
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Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE VCE(sat) f T Cob
Test IC=-50? A, IE=0 IC=-1m A, IB=0 IE=-50? A, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 conditions
MIN -50 -50 -6
UNIT V V V ?A ?A
200 36
-0.1 -0.1 270 -0.35
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
VCE=-2V, IC=-500m A IC=-1A, IB=-50m A VCE=-2V, IC=-0.5A, f=100MHz VCB=-10V, IE=0, f=1MHz
- V MHz p F
- CLASSIFICATION OF Rank Range Marking h FE P 82-180 AGP Q 120-270 AGQ
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14-Oct-08
Typical Characteristics
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