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WED8L24258V Datasheet Preview

WED8L24258V Datasheet

Asynchronous SRAM

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WED8L24258V
Asynchronous SRAM, 3.3V, 256Kx24
FEATURES
n 256Kx24 bit CMOS Static
n Random Access Memory Array
• Fast Access Times: 10, 12, and 15ns
• Master Output Enable and Write Control
• Three Chip Enables for Byte Control
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
n Surface Mount Package
• 119 Lead BGA (JEDEC MO-163), No. 391
• Small Footprint, 14mmx22mm
• Multiple Ground Pins for Maximum Noise Immunity
n Single +3.3V (±5%) Supply Operation
n DSP Memory Solution
• Motorola DSP5630x
• Analog Devices SHARCTM
DESCRIPTION
The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM con-
structed with three 256Kx8 die mounted on a multi-layer laminate
substrate. With 10 to 15ns access times, x24 width and a 3.3V
operating voltage, the WED8L24258V is ideal for creating a single chip
memory solution for the Motorola DSP5630x or a two chip solution
for the Analog Devices SHARCTM DSP.
The single or dual chip memory solutions offer improved system
performance by reducing the length of board traces and the number
of board connections compared to using multiple monolithic devices.
The JEDEC Standard 119 lead BGA provides a 69% space savings
over using six 256Kx4, 300 mil wide SOJs and the BGA package
has a maximum height of 110 mils compared to 148 mils for the SOJ
packages. The BGA package also allows the use of the same
manufacturing and inspection techniques as the Motorola DSP, which
is also in a BGA package.
FIG. 1
PIN CONFIGURATION
PIN SYMBOLS
12 3 45 67
A NC AO A1 A2 A3 A4 NC
B NC A5 A6 E0 A7 A8 NC
C I/012 N C E2 N C E3 N C I/00
D I/013 VCC GND GND GND VCC I/01
E I/014 GND VCC GND VCC GND I/02
F I/015 VCC GND GND GND VCC I/03
G I/016 GND VCC GND VCC GND I/04
H I/017 VCC GND GND GND VCC I/05
J NC GND VCC GND VCC GND NC
K I/018 VCC GND GND GND VCC I/06
L I/019 GND VCC GND VCC GND I/07
M I/020 VCC GND GND GND VCC I/08
N I/021 GND VCC GND VCC GND I/09
P I/022 VCC GND GND GND VCC I/010
R I/023 N C N C N C N C A17 I/011
T N C A9 A10
W A11 A12 N C
U N C A13 A14
G A15 A16 N C
A0-17
E
W
G
DQ0-23
VCC
GND
NC
PIN NAMES
Address Inputs
Chip Enable
Master Write Enable
Master Output Enable
Common Data Input/Output
Power (3.3V ±5%)
Ground
No Connection
BLOCK DIAGRAM
A0-A17
G
W
E0
E2
E3
18
256K x 24
Memory
Array
DQ0-7
DQ8-15
DQ16-23
July 2002 Rev. 0A
ECO #15432
1 White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com




White Electronic Designs

WED8L24258V Datasheet Preview

WED8L24258V Datasheet

Asynchronous SRAM

No Preview Available !

WED8L24258V
ABSOLUTE MAXIMUM RATINGS
Voltage on any pin relative to VSS
Operating Temperature TA(Ambient)
Commercial
Industrial
Storage Temperature
Power Dissipation
Output Current.
-0.5V to 4.6V
0°C to + 70°C
-40°C to +85°C
-55°C to +125°C
1.5 Watts
50 mA
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions greater than those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
NOTE: For TEHQZ,TGHQZ and TWLQZ, Figure 3
VSS to 3.0V
5ns
1.5V
Figure 2
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Sym Min Typ Max Units
VCC 3.135 3.3 3.465 V
VSS 0 0 0 V
VIH 2.2 -- VCC+0.3 V
VIL -0.3 -- 0.8 V
FIG. 2
FIG. 3
Q Z0Z0==5500ΩΩ
RL = 50
VL = 1.5V
65 pF
DOUT
353
VCC
319
5 pF
DC ELECTRICAL CHARACTERISTICS
Parameter
Sym Conditions
Min Max
Units
10ns 12-15ns
Operating Power Supply Current ICC1
W= VIL, II/O = 0mA,
Min Cycle
500 480 mA
Standby (TTL) Supply Current
ICC2
E > VIH, VIN < VIL or
VIN > VIH, f=ØMHz
150 150 mA
Full Standby CMOS
ICC3
E > VCC-0.2V
90 90 mA
Supply Current
VIN > VCC-0.2V or
VIN < 0.2V
Input Leakage Current
ILI VIN = 0V to VCC
±10 ±10 µA
Output Leakage Current
ILO V I/O = 0V to VCC
±10 ±10 µA
Output High Volltage
VOH IOH = -4.0mA
2.4
V
Output Low Voltage
VOL IOL = 4.0mA
0.4 0.4
V
TRUTH TABLE
G E0 E2 E3 W
Mode
Output Power
XH H H X
Standby
High Z ICC2,ICC3
H L L L H Output Deselect High Z ICC1
L L L L H Read (24 bit) DOUT ICC1
LL H H H
Read
DQ0-7
ICC1
LH L H H
Read
DQ8-15
ICC1
L H H L H Read DQ16-23 ICC1
X L L L L Write (24 bit) DIN ICC1
XL H H L
Write
DQ0-7
ICC1
XH L H L
Write
DQ8-15
ICC1
X H H L L Write DQ16-23 ICC1
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
2
CAPACITANCE
(f=1.0MHz, VIN=VCC or VSS)
Parameter
Address Lines
Data Lines
Write & Output Enable Lines
Chip Enable Lines
Sym
CA
CD/Q
W, G
EØ, E2, E3
These parameters are sampled, not 100% tested.
Max
8
10
8
8
Unit
pF
pF
pF
pF
July 2002 Rev. 0A
ECO #15432


Part Number WED8L24258V
Description Asynchronous SRAM
Maker White Electronic Designs
Total Page 5 Pages
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