900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WillSEMI

WCR650N60TF Datasheet Preview

WCR650N60TF Datasheet

MOSFET

No Preview Available !

WCR650N60T Series
WCR650N60T/ WCR650N60TF/ WCR650N60TG/ WCR650N60TN
600V N-Channel Super Junction MOSFET
Description
Features
The WCR600N60T series is new generation of high voltage
MOSFET family that is utilizing an advanced charge balance
mechanism for outstanding low on resistance and lower gate
650V@TJ=150°C
Typ.RDS(on)=0.57
Low gate charge(typ. Qg= 9.6nC)
charge performance. This advanced technology has been tai-
lored to minimize conduction loss, provide superior switching
100% avalanche tested
100% Rg tested
performance, and withstand extreme dv/dt rate and higher
avalanche energy. This device is suitable for various AC/DC
power conversion in switching mode operation for higher
efficiency.
Order Information
Device
Package
Marking
Units/Tube
WCR650N60T-3/T
TO-220
WCR650N60TYYWW
50
WCR650N60TF-3/T
TO-220-F
WCR650N60TFYYWW
50
WCR650N60TN-3/T TO-251(IPAK) WCR650N60TGYYWW
70
WCR650N60TG-3/T TO-252E-2 WCR650N60TNYYWW
Note 1: WCR650N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR650N60TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR650N60TG=Device code ; YY=Year ;WW=Week (A~z);
Note 4: WCR650N60TN=Device code ; YY=Year ;WW=Week (A~z);
70
WCR
650N60
TFYYWW
WCR
650N60
TYYWW
WNM
650N60
TNYYWWW
TO-220F
TO-220
TO-251(IPAK)
Absolution Maximum Ratings TA=250C unless otherwise noted
WCR650N60T
Parameter
Symbol WCR650N60TN
WCR650N60TF
WCR650N60TG
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
7.3
4.6
16
86
1.7
0.2
Power Dissipation
TC=25°C
Derate above 25°C
PD
62.5
0.5
27.7
0.22
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
2
4.5
WCR
650N60
TGYYWW
TO-252E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.1.0




WillSEMI

WCR650N60TF Datasheet Preview

WCR650N60TF Datasheet

MOSFET

No Preview Available !

Electronics Characteristics (TA=25oC, unless otherwise noted)
WCR650N60T Series
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA,TJ=25°C
VGS = 0 V, ID = 250uA,TJ=150°C
VDS = 600V, VGS = 0V,TJ=25°C
VDS = 480V, VGS = 0V,TJ=125°C
VDS = 0 V, VGS =±30 V
600
650
1
10
±100
V
V
uA
uA
nA
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250uA
VGS = 10V, ID = 3.5A
VDS= 40V, ID= 3.5A (NOTE D)
2.5 4.5
0.55 0.65
20
V
s
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
Rg
VGS = 0 V,
f = 1.0 MHz, VDS = 25 V
VGS = 10 V,
VDS = 480 V,ID = 3.5A
(NOTE DE)
VGS=0V,VDS=0V,F=1MHZ
403
96 pF
21
9.6
2.9 nC
3.6
5
Turn-On Delay Time
td(on)
VGS = 10V,
Rise Time
Turn-Off Delay Time
tr
td(off)
VDS = 400 V,
ID = 3.5 A, RG=20
Fall Time
tf (NOTE DE
Drain to Source Diode Characteristics and Maximum Ratings
17.1
15.9
ns
33.2
11.2
Forward Voltage
VSD VGS = 0 V, IS = 7.0A
Body-Diode Continuous Current
IS
Body-Diode Pulsed Current
ISM
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery current
Trr
Qrr
Irr
IF=7A,dI/dt=100A/us, VDS=100V
(NOTE D)
NOTES:
A. Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
1.5
7.3
16
416
2.58
12.4
V
A
A
nS
uC
A
B. Pulse width limited by maximum junction temperature
C. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25
D. Pulse Test: Pulse width300us, Duty Cycle 2%
E. Essentially Independent of Operating Temperature Typical Characteristics
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heat sink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Will Semiconductor Ltd. 2 Jan, 2016 - Rev.1.0


Part Number WCR650N60TF
Description MOSFET
Maker WillSEMI
Total Page 7 Pages
PDF Download

WCR650N60TF Datasheet PDF

View PDF for Mobile






Similar Datasheet

1 WCR650N60T MOSFET
WillSEMI
2 WCR650N60TF MOSFET
WillSEMI
3 WCR650N60TG MOSFET
WillSEMI
4 WCR650N60TN MOSFET
WillSEMI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy