Electronics Characteristics (TA=25oC, unless otherwise noted)
WCR650N60T Series
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
ON CHARACTERISTICS
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA,TJ=25°C
VGS = 0 V, ID = 250uA,TJ=150°C
VDS = 600V, VGS = 0V,TJ=25°C
VDS = 480V, VGS = 0V,TJ=125°C
VDS = 0 V, VGS =±30 V
600
650
1
10
±100
V
V
uA
uA
nA
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250uA
VGS = 10V, ID = 3.5A
VDS= 40V, ID= 3.5A (NOTE D)
2.5 4.5
0.55 0.65
20
V
Ω
s
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
Rg
VGS = 0 V,
f = 1.0 MHz, VDS = 25 V
VGS = 10 V,
VDS = 480 V,ID = 3.5A
(NOTE D、E)
VGS=0V,VDS=0V,F=1MHZ
403
96 pF
21
9.6
2.9 nC
3.6
5Ω
Turn-On Delay Time
td(on)
VGS = 10V,
Rise Time
Turn-Off Delay Time
tr
td(off)
VDS = 400 V,
ID = 3.5 A, RG=20 Ω
Fall Time
tf (NOTE D、E
Drain to Source Diode Characteristics and Maximum Ratings
17.1
15.9
ns
33.2
11.2
Forward Voltage
VSD VGS = 0 V, IS = 7.0A
Body-Diode Continuous Current
IS
Body-Diode Pulsed Current
ISM
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery current
Trr
Qrr
Irr
IF=7A,dI/dt=100A/us, VDS=100V
(NOTE D)
NOTES:
A. Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
1.5
7.3
16
416
2.58
12.4
V
A
A
nS
uC
A
B. Pulse width limited by maximum junction temperature
C. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25℃
D. Pulse Test: Pulse width≤300us, Duty Cycle ≤2%
E. Essentially Independent of Operating Temperature Typical Characteristics
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heat sink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Will Semiconductor Ltd. 2 Jan, 2016 - Rev.1.0
