WPM2049B Description
Descriptions The WPM2049B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WPM2049B Key Features
- Trench Technology
- ESD protection up to 2 kV
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package DFN1006-3L
WPM2049B Applications
- Driver for Relay, Solenoid, Motor, LED etc