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WPM2049B - MOSFET

General Description

The WPM2049B is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • ESD protection up to 2 kV.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN1006-3L DFN1006-3L Pin configuration (Top view) E.

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Datasheet Details

Part number WPM2049B
Manufacturer WillSEMI
File Size 473.96 KB
Description MOSFET
Datasheet download datasheet WPM2049B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM2049B Single P-Channel, -20V, -0.51A, Power MOSFET VDS (V) -20 Typical Rds(on) (Ω) 0.440@ VGS=-4.5V 0.640@ VGS=-2.5V 0.880@ VGS=-1.8V WPM2049B Http://www.sh-willsemi.com Descriptions The WPM2049B is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2049B is Pb-free and Halogen-free. Features  Trench Technology  ESD protection up to 2 kV  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN1006-3L DFN1006-3L Pin configuration (Top view) E* Applications  Driver for Relay, Solenoid, Motor, LED etc.