Description
The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor.
Features
- WPMD2011
Http://www. willsemi. com
DFN2x2-6L
S1 1 G1 2
D1
6 D1
5 G2
D2 3
D2
4 S2
Pin Configuration (Top View)
z Trench Technology z Supper high density cell design z Excellent ON resistance for highest DC current z Extremely low threshold voltage z Bidirectional current flow with common source
configuration
z DFN2x2 package provides exposed drain pad for excellent thermal conduction
WLSI GYWW
WLSI G Y WW
= Company Code = Device Code = Year (last digit) = Week.
WPMD2011-WillSEMI.pdf
