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WPMD2012 - MOSFET

Description

The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www. willsemi. com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12.
  • 1 23 12 = Device Code.
  • = Month (A~Z) Marking.

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Datasheet preview – WPMD2012

Datasheet Details

Part number WPMD2012
Manufacturer WillSEMI
File Size 421.15 KB
Description MOSFET
Datasheet download datasheet WPMD2012 Datasheet
Additional preview pages of the WPMD2012 datasheet.

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Full PDF Text Transcription

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WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V Descriptions The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WPMD2012 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www.willsemi.
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