Datasheet Summary
Dual P-Channel, -20V, -0.64A, Small Signal MOSFET
VDS (V) -20
Rds(on) (ȍ)
0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V
Descriptions
The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WPMD2012 is Pb-free.
Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363
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SOT-363
D1 G2 S2 6 54
1 23 S1 G1 D2
Pin configuration (Top view)
6 54
12-
1 23
12 =...