WPMD2012 Datasheet MOSFET

Manufacturer: WillSEMI

Datasheet Details

s The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, load switch and level shift.

WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.

z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www. willsemi. com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12.
1 23 12 = Device Code.
= Month (A~Z) Marking.

Part Number	Description
WPMD2010	MOSFET
WPMD2011	MOSFET
WPMD2013	MOSFET
WPMD2008	MOSFET
WPMD2075	MOSFET
WPMD2076	MOSFET
WPMD2084	MOSFET
WPMD3002	MOSFET
WPM1481	Single P-Channel Power MOSFET
WPM2005	Power MOSFET and Schottky Diode