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WPMD2011 - MOSFET

Description

The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Features

  • WPMD2011 Http://www. willsemi. com DFN2x2-6L S1 1 G1 2 D1 6 D1 5 G2 D2 3 D2 4 S2 Pin Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for highest DC current z Extremely low threshold voltage z Bidirectional current flow with common source configuration z DFN2x2 package provides exposed drain pad for excellent thermal conduction WLSI GYWW WLSI G Y WW = Company Code = Device Code = Year (last digit) = Week.

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Datasheet Details

Part number WPMD2011
Manufacturer WillSEMI
File Size 188.39 KB
Description MOSFET
Datasheet download datasheet WPMD2011 Datasheet
Additional preview pages of the WPMD2011 datasheet.

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Full PDF Text Transcription

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WPMD2011 Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) (Ÿ) 0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V Description The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WPMD2011 is Pb-free. Features WPMD2011 Http://www.willsemi.
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