Datasheet Summary
Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET
V(BR)DSS -20
Rds(on) ()
0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V
Description
The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WPMD2011 is Pb-free.
Features
Http://.willsemi.
DFN2x2-6L
S1 1 G1 2
D1
6 D1
5 G2
D2 3
D2
4 S2
Pin Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for highest DC current z Extremely low threshold...