Datasheet Summary
Dual P-Channel, -20 V,
- 4 .1A, Power MOSFET
Description
The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free.
Features
9%5'66 í20 V
5'6RQ 0$;
110m¡@ í4.5V 138m¡@ í2.5V
Http://.willsemi. z Lowest RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with mon Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
Applicat...