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WPMD2008 - MOSFET

Description

The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion applications.

Standard Product WPMD2008 is Pb-free.

Features

  • 9 %5 '66 í20 V 5'6 RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://www. willsemi. com z Lowest RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction.

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Datasheet preview – WPMD2008

Datasheet Details

Part number WPMD2008
Manufacturer WillSEMI
File Size 466.30 KB
Description MOSFET
Datasheet download datasheet WPMD2008 Datasheet
Additional preview pages of the WPMD2008 datasheet.

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Full PDF Text Transcription

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WPMD2008 Dual P-Channel, -20 V, - 4 .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features 9 %5 '66 í20 V 5'6 RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://www.willsemi.com z Lowest RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.
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