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WPMD2010 - MOSFET

Description

The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion applications.

Standard Product WPMD2010 is Pb-free.

Features

  • V(BR)DSS.
  • 20 V RDS(on) Typ 75mΩ@.
  • 4.5V 101mΩ@.
  • 2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction.

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Datasheet preview – WPMD2010

Datasheet Details

Part number WPMD2010
Manufacturer WillSEMI
File Size 772.10 KB
Description MOSFET
Datasheet download datasheet WPMD2010 Datasheet
Additional preview pages of the WPMD2010 datasheet.

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Full PDF Text Transcription

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WPMD2010 Dual P-Channel, -20 V, -3.6A, Power MOSFET Description The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free. Features V(BR)DSS −20 V RDS(on) Typ 75mΩ@ −4.5V 101mΩ@ −2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.
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