Datasheet Summary
Dual P-Channel, -20 V, -3.6A, Power MOSFET
Description
The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2010 is Pb-free.
Features
V(BR)DSS
- 20 V
RDS(on) Typ 75mΩ@
- 4.5V
101mΩ@
- 2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with mon Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
Application z Optimized for Battery and Load...